vishay siliconix DG2788, dg2789 document number: 73863 s11-0303-rev. e, 28-feb-11 www.vishay.com 1 low voltage, low on-resistance, dual dpdt/quad spdt analog switch features ? low voltage operation (1.65 v to 4.3 v) ? low on-resistance - r on : 0.4 ? typ. at 2.7 v ? fast switching: t on = 47 ns t off = 15 ns ? miniqfn-16 package ? latch-up current > 300 ma (jesd78) benefits ? reduced power consumption ? high accuracy ? reduce board space ? ttl/1.8 v logic compatible ? high bandwidth applications ? cellular phones ? speaker headset switching ? audio and video signal routing ? pcmcia cards ? battery operated systems description the DG2788, dg2789 are monolithic cmos analog switching products designed for high performance switching of analog signals. combining low power, high speed, low on-resistance and small physical size, the DG2788, dg2789 are ideal for portable and battery powered applications requiring high performance and efficient use of board space. the DG2788, dg2789 are built on vishay siliconix?s low voltage process. an epitaxial layer prevents latchup. break- before-make is guaranteed. the switch conducts equally well in both directions when on, and blocks up to the power supply level when off. the DG2788 is configured as a dual double pole double throw switches while the dg2789 is configured as a quad single pole double throw. the dg2789 has one control pin for all four spdt switches and also has an enable pin that can turn all switches off. the DG2788 and dg2789 comes in a small miniqfn-16 lead package (2.6 x 1.8 x 0.75 mm). as a committed partner to the community and the environment, vishay siliconix manufactures this product with the lead (pb)-free device terminations and is 100 % rohs compliant. functional block diagram and pin configuration 16 15 14 13 12 11 10 9 8 7 4 6 5 1 2 3 nc1 in1, in2 no2 com2 com4 no4 in3, in4 nc3 nc2 gnd no3 com3 to p v i ew com1 no1 v+ nc4 DG2788 miniqfn-16 16 15 14 13 12 11 10 9 8 4 6 5 1 2 3 nc1 in1 no2 com2 com4 no4 en nc3 nc2 gnd no3 com3 top view com1 no1 v+ nc4 dg2789 miniqfn-16 7 device marking: axx for DG2788 bxx for dg2789 xx = date/lot traceability code note: pin 1 has long lead axx pin 1 truth table (DG2788) logic nc1, 2, 3 and 4 no1, 2, 3 and 4 0onoff 1offon truth table (dg2789) en logic in logic nc1, 2, 3 and 4 no1, 2, 3 and 4 00onoff 01offon 1xoffoff ordering information temp. range package part number - 40 c to 85 c miniqfn-16 DG2788dn-t1-e4 dg2789dn-t1-e4 www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com 2 document number: 73863 s11-0303-rev. e, 28-feb-11 vishay siliconix DG2788, dg2789 notes: a. signals on nc, no, or com or in exceeding v+ will be clamped by inte rnal diodes. limit forward diode current to maximum curr ent ratings. b. all leads welded or soldered to pc board. c. derate 6.6 mw/c above 70 c d. manual soldering with iron is not re commended for leadless components. the miniqfn- 16 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper l ip cannot be guaranteed and is not required to ensure adequa te bottom side solder interconnection. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit reference to gnd v+ - 0.3 to 5.0 v in, com, nc, no a - 0.3 to (v+ + 0.3) current (any terminal except no, nc or com) 30 ma continuous current (no, nc, or com) 300 peak current (pulsed at 1 ms, 10 % duty cycle) 500 storage temperature (d suffix) - 65 to 150 c package solder reflow conditions d miniqfn-16 250 power dissipation (packages) b miniqfn-16 c 525 mw www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 73863 s11-0303-rev. e, 28-feb-11 www.vishay.com 3 vishay siliconix DG2788, dg2789 specifications (v+ = 3 v) parameter symbol test conditions otherwise unless specified v+ = 3 v, 10 %, v in = 0.5 or 1.4 v e temp. a limits - 40 c to 85 c unit min. b typ. c max. b analog switch analog signal range d v no , v nc , v com full 0 v+ v on-resistance r on v+ = 2.7 v, v com = 0.5 v, i no , i nc = 100 ma room 0.4 0.5 ? v+ = 2.7 v, v com = 1.5 v, i no , i nc = 100 ma 0.33 full 0.56 r on flatness d r on flatness v+ = 2.7 v, v com = 0 to v+, i no , i nc = 100 ma room 0.1 0.15 r on match d ? r on room 0.05 switch off leakage current i no(off) , i nc(offf) v+ = 3.3 v, v no , v nc = 0.3 v/3.0 v, v com = 3.0 v/0.3 v room full - 1 - 10 1 10 na i com(off) room full - 1 - 10 1 10 channel-on leakage current i com(on) v+ = 3.3 v, v no , v nc = v com = 0.3 v/3.0 v room full - 1 - 10 1 10 digital control input high voltage v inh full 1.4 v input low voltage v inl full 0.5 input capacitance c in full 6 pf input current i inl or i inh v in = 0 or v+ full - 1 1 a dynamic characteristics tu r n - o n t i m e t on v no or v nc = 1.5 v, r l = 50 ? , c l = 35 pf romm full 47 72 75 ns turn-off time t off room full 15 43 45 break-before-make time t d full 1 charge injection d q inj c l = 1 nf, v gen = 0 v, r gen = 0 ? room 87 pc off-isolation d oirr r l = 50 ? , c l = 5 pf, f = 100 khz room - 69 db r l = 50 ? , c l = 5 pf, f = 1 mhz - 49 crosstalk d, f x ta l k r l = 50 ? , c l = 5 pf, f = 100 khz - 106 r l = 50 ? , c l = 5 pf, f = 1 mhz - 96 n o , n c off capacitance d c no(off) f = 1 mhz room 81 pf c nc(off) room 81 channel-on capacitance d c no(on) room 186 c nc(on) room 186 power supply power supply range v+ 2.7 3.3 v power supply current i+ v in = 0 or v+ full 1.0 a www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com 4 document number: 73863 s11-0303-rev. e, 28-feb-11 vishay siliconix DG2788, dg2789 notes: a. room = 25 c, full = as determined by the operating suffix. b. the algebraic convention whereby the most negative value is a minimum and the most pos itive a maximum, is used in this data sheet. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. guarantee by design, not subjected to production test. e. v in = input voltage to perform proper function. f. crosstalk measured between channels. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (v+ = 4.3 v) parameter symbol test conditions otherwise unless specified v+ = 4.3 v, v in = 0.5 or 1.6 v e temp. a limits - 40 c to 85 c unit min. b typ. c max. b analog switch analog signal range d v no , v nc , v com full 0 v+ v on-resistance r on v+ = 4.3 v, v com = 0.9 v, i no , i nc = 100 ma room 0.32 0.45 ? v+ = 4.3 v, v com = 2.5 v, i no , i nc = 100 ma 0.27 full 0.5 r on flatness d r on flatness v+ = 4.3 v, v com = 0 to v+, i no , i nc = 100 ma room 0.1 0.15 r on match d ? r on room 0.03 switch off leakage current d i no(off) , i nc(offf) v+ = 4.3 v, v no , v nc = 0.3 v/4.0 v, v com = 4.0 v/0.3 v room full -10 - 100 10 100 na i com(off) room full - 10 - 100 10 100 channel-on leakage current d i com(on) v+ = 4.3 v, v no , v nc = v com = 3.0 v/4.0 v room full - 10 - 100 10 100 digital control input high voltage v inh full 1.6 v input low voltage v inl full 0.5 input capacitance c in full 6 pf input current i inl or i inh v in = 0 or v+ full - 1 1 a dynamic characteristics charge injection d q inj c l = 1 nf, v gen = 0 v, r gen = 0 ? room 105 pc n o , n c off capacitance d c no(off) f = 1 mhz room 79 pf c nc(off) room 79 channel-on capacitance d c no(on) room 183 c nc(on) room 183 power supply power supply range v+ 4.3 v power supply current i+ v in = 0 or v+ full 1.0 a www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 73863 s11-0303-rev. e, 28-feb-11 www.vishay.com 5 vishay siliconix DG2788, dg2789 typical characteristics (t a = 25 c, unless otherwise noted) r on vs. v com and supply voltage r on vs. analog voltage and temperature supply current vs. input switching frequency 0.00 0.25 0.50 0.75 1.00 1.25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v com - analog v oltage ( v ) ( ) e c n a t s i s e r - n o - r n o t = 25 c i s = 100 ma n c s w itch v + = 1. 8 v v + = 2.3 v v + = 2.7 v v + = 3.0 v v + = 3.6 v v + = 4.3 v v + = 1.65 v 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v com - analog v oltage ( v ) ( ) e c n a t s i s e r - n o - r n o - 40 c i s = 100 ma v + = 4.3 v 8 5 c 25 c 10 10 k 100 k 10 m 100 1 k 1 m 100 m 1 m 100 10 1 10 n ) a ( t n e r r u c y l p p u s - + i 100 n 1 n 10 m inp u t s w itching fre qu ency (hz) v + = 3.0 v r on vs. analog voltage and temperature supply current vs. temperature leakage current vs. temperature 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.0 0.6 1.2 1. 8 2.4 3.0 v com - analog v oltage ( v ) ( ) e c n a t s i s e r - n o - r n o - 40 c i s = 100 ma v + = 3 v 8 5 c 25 c - 60 - 40 - 20 0 20 40 60 8 0 100 temperat u re (c) ) a p ( t n e r r u c y l p p u s - + i 10 100 1000 10 000 v + = 3 v v i n = 0 v 1 1000 temperat u re (c) v + = 3.3 v 10 100 i n c(off) i com(off) i com(on) ) a p ( t n e r r u c e g a k a e l - 60 - 40 - 20 0 20 40 60 8 0100 n c www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com 6 document number: 73863 s11-0303-rev. e, 28-feb-11 vishay siliconix DG2788, dg2789 typical characteristics (t a = 25 c, unless otherwise noted) leakage vs. analog voltage insertion loss, off-isolation crosstalk vs. frequency - 600 - 400 - 200 0 200 400 600 8 00 0.00 0.50 1.00 1.50 2.00 2.50 3.00 v com , v n o , v n c - analog v oltage ( v ) ) a p ( t n e r r u c e g a k a e l v + = 3.3 v i com(off) i com(on) i n o(off) , ii n c(off) - 120 - 110 - 100 - 90 - 8 0 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 10 100k 1m 10m 100m 1g fre qu ency (hz) loss, oirr, x talk (db) v + = 3 v r = 50 l xtalk oirr loss switching time vs. temperature switching threshold vs. supply voltage temperat u re (c) 0 10 20 30 40 50 60 70 8 0 - 40 - 20 0 20 40 60 8 0 t o n , t off - s w itching time (ns) t o n v + = 1. 8 v t o n v + = 3.0 v t o n v + = 3.3 v t off v + = 1. 8 v t off v + = 3.3 v t off v + = 3.0 v 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v + - s u pply v oltage ( v ) h t g n i h c t i w s - ) v ( d l o h s e r v t charge injection vs. analog voltage - 120 - 8 0 - 40 0 40 8 0 120 160 200 ) c p ( n o i t c e j n i e g r a h c - q 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v com - analog v oltage ( v ) v + = 1. 8 v v + = 3 v v + = 4.3 v www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 73863 s11-0303-rev. e, 28-feb-11 www.vishay.com 7 vishay siliconix DG2788, dg2789 test circuits figure 1. switching time switch input c l (includes fixture and stray capacitance) v+ in no or nc c l 35 pf com logic input r l 50 v out gnd v+ 50 % 0 v logic input switch output t on t off logic ?1? = switch on logic input waveforms inverted for switches that have the opposite logic sense. 0 v switch output v out v com r l r l r on 0.9 x v out t r 5 ns t f 5 ns v inh v inl ? ? ? ? ? ( ) figure 2. break-before-make interval c l (includes fixture and stray capacitance) nc v no no v nc 0 v logic input switch output v o v nc = v no t r < 5 ns t f < 5 ns 90 % t d t d in com v+ gnd v+ c l 35 pf v o r l 50 ? v inl v inh figure 3. charge injection off on on in v out v out q = ? v out x c l c l = 1 nf r gen v out com v in = 0 - v+ in gnd v+ v+ in depends on switch configuration: input polarity determined b y sense of switch. + nc or no v gen ? www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com 8 document number: 73863 s11-0303-rev. e, 28-feb-11 vishay siliconix DG2788, dg2789 test circuits vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73863 . figure 4. off-isolation in gnd nc or no 0 v, 2.4 v 10 nf com off isolation 20 log v com v no / nc r l analyzer v+ v+ com = figure 5. channel off/on capacitance nc or no f = 1 mhz in com gnd 0 v, 2.4 v meter hp4192a impedance analyzer or equivalent 10 nf v+ v+ www.datasheet.co.kr datasheet pdf - http://www..net/
vishay siliconix package information document number: 74323 14-aug-06 www.vishay.com 1 mini qfn-16l dim millimeters inches min. nam max. min. nam max. a 0.70 0.75 0.80 0.0275 0.0295 0.0315 a1 0 - 0.05 0 - 0.002 b 0.15 0.20 0.25 0.0059 0.0078 0.0098 c 0.15 0.20 0.25 0.0059 0.0078 0.0098 d 2.60 bsc 0.1023 bsc e 1.80 bsc 0.0708 bsc e 0.40 bsc 0.0157 bsc l 0.35 0.40 0.45 0.0137 0.0157 0.0177 l1 0.45 0.50 0.55 0.0177 0.0196 0.0216 ecn t-06380-rev. a, 14-aug-06 dwg: 5954 back side v ie w d e (2) (1) (16) (15) (14) (13) a c b e l a1 (4) (3) (5) (6) (7) ( 8 ) (9) (12) (11) (10) (10) (9) (12) (11) (3) (2) (1) (4) (16) (15) (14) (13) (5) (6) (7) ( 8 ) l1 www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners. www.datasheet.co.kr datasheet pdf - http://www..net/
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